Preliminary
STK14EC8
a
ABSOLUTE MAXIMUM RATINGS
Note a: Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at con-
ditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
Voltage on Input Relative to Ground . . . . . . . . . . . . . –0.5V to 4.1V
Voltage on Input Relative to VSS . . . . . . . . . .–0.5V to (VCC + 0.5V)
Voltage on DQ0-7 or HSB . . . . . . . . . . . . . . . .–0.5V to (VCC + 0.5V)
Temperature under Bias. . . . . . . . . . . . . . . . . . . . . .–55°C to 125°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . .–55°C to 140°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .–65°C to 150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
DC Output Current (1 output at a time, 1s duration) . . . . . . . 15mA
TF (TSOP-II 44) PACKAGE THERMAL CHARACTERISTICS
θ
jc tbd; θja tbd [0fpm], tbd [200fpm], tbd C/W [500fpm].
BF (FBGA48) PACKAGE THERMAL CHARACTERISTICS
θ
jc tbd C/W; θja tbd [0fpm], tbd [200fpm], tbd C/W [500fpm].
DC CHARACTERISTICS
(V = 2.7V-3.6V)
CC
COMMERCIAL
INDUSTRIAL
SYMBOL
PARAMETER
Average V Current
UNITS
NOTES
MIN
MAX
MIN
MAX
I
CC
1
CC
t
t
t
= 15ns
= 25ns
= 45ns
AVAV
AVAV
AVAV
70
65
50
75
70
52
mA
mA
mA
Dependent on output loading and cycle
rate. Values obtained without output
loads.
I
I
Average V Current during STORE
All Inputs Don’t Care, V = max
CC
Average current for duration of STORE
CC
CC
2
3
6
6
mA
mA
cycle (t
)
STORE
Average V Current at t
CC
= 200ns
W ≥ (V – 0.2V)
CC
AVAV
CC
3V, 25°C, Typical
All Other Inputs Cycling at CMOS Levels
Dependent on output loading and cycle
rate. Values obtained without output
loads.
13
13
I
I
Average V
AutoStore™ Cycle
Current during
All Inputs Don’t Care
Average current for duration of STORE
CC
CAP
4
6
3
6
3
mA
mA
cycle (t
)
STORE
V
Standby Current
E ≥ (V -0.2V)
SB
CC
CC
(Standby, Stable CMOS Levels)
All Others V ≤ 0.2V or ≥ (V -0.2V)
IN
CC
Standby current level after nonvolatile
cycle complete
I
I
Input Leakage Current
V
= max
CC
ILK
±1
±1
±1
±1
μA
μA
V
= V to V
CC
IN
SS
Off-State Output Leakage Current
V = max
CC
OLK
V
= V to V , E or G ≥ V
IH
IN
SS
CC
V
V
V
V
T
Input Logic “1” Voltage
Input Logic “0” Voltage
Output Logic “1” Voltage
Output Logic “0” Voltage
Operating Temperature
Operating Voltage
2.0
V
+ 0.5
2.0
–0.5
V + 0.5
CC
V
V
All Inputs
All Inputs
IH
CC
V
–0.5
0.8
V
0.8
IL
SS
SS
2.4
2.4
V
I
I
=–2mA (except HSB)
= 4mA
OH
OL
OUT
OUT
0.4
70
0.4
85
V
0
–40
2.7
°C
V
A
V
2.7
3.6
3.6
3.0V nominal
Between V pin and V , 5V rated
CAP SS
CC
V
Storage Capacitance
CAP
61
82
61
180
μF
(Nom. 68 μF to 150 μF +20%, - 10%)
NV
Nonvolatile STORE operations
Data Retention
200
20
200
20
K
C
DATA
Years
@ 55 deg C
R
Note: The HSB pin has IOUT = -10 uA for VOH of 2.4 V. This parameter is characterized but not tested.
Rev 1.1
Document Control #ML0060
Jan, 2008
3
Simtek Confidential
SIMTEK [ SIMTEK CORPORATION ]
