Preliminary
GM5BW97331A
■ Absolute Maximum Ratings
(Tc = 25°C)
Unit
mW
°C
Parameter
Symbol
P
Rating
300
Power dissipation (Package total)
Junction temperature
TJ
125
Thermal resistance (junction-to-case)
Forward current *1
K
95
°C/W
mA
IF
30
Peak pulsed forward current *1, *2
IFM
DC
Pulse
VR
100
mA
0.50
mA/°C
mA/°C
V
Forward current derating factor *1, 2
1.67
Reverse voltage *1
5
Operating temperature *3
Storage temperature *4
Soldering temperature *5
Tc
-30 to +100
-40 to +100
295
°C
Tstg
Tsol
°C
°C
1 Rating for single chip (die) operation.
*
2 Duty ratio = 1/10, Pulse width = 0.1 ms.
*
3 Case temperature (See External Dimensions on page 2).
4 Do not exceed these temperatures under any condition while in packing. Refer to Storage and Handling.
5 Each terminal must be soldered with a 30 W soldering iron within 3 seconds under 295°C.
For Reflow Soldering information, see Fig. 19.
*
*
*
6 Operating current values here follow the derating curves shown in Fig. 1 through Fig. 3.
*
7 This device uses the leads for heat sinking, therefore the operating temperature range is prescribed by Tc.
*
■ Electro-optical Characteristics
(Tc = 25°C)
Parameter
Forward voltage *1
Symbol
Conditions
MIN.
TYP.
(3.2)
MAX.
Unit
V
VF
IV
IF = 20 mA (per chip)
3.0
3.4
Luminous intensity *1, *2
(7.0)
cd
IF = 20 mA
(per chip, all chips on)
Chromaticity coordinates *1, *3
x, y
IR
(0.335, 0.344)
—
Reverse current *1
VR = 4 V (per chip)
—
10
µA
1 Rating for three-chip (die) operation.
*
*
*
2 Measured by EG&G Model 550 (Radiometer/Photometer) after 20 ms drive (Tolerance: ±15%) See the Luminosity Rank table for ranking range details.
3 Measured by Otuka Electronics Model MCPD-2000 after 20 ms drive (Tolerance: x, y: ±0.02). All chips (die) operating. See the Chromaticity Rank
table for ranking range details.
*4 Parens indicate reference values.
3