SFP830D
ThermalꢀCharacteristicsꢀ
ꢀ
Ratingsꢀ
1.65ꢀ
0.5ꢀ
Symbolꢀ
Parameterꢀ
Unitꢀ
℃/Wꢀ
℃/Wꢀ
℃/Wꢀ
R
R
R
ꢀ
θJCꢀ ꢀ
θCSꢀ
θJAꢀ
ThermalꢀResistanceꢀJunctionꢀtoꢀCaseꢀ ꢀ
ThermalꢀResistanceꢀCaseꢀtoꢀSinkꢀTyp.ꢀ
ThermalꢀResistanceꢀJunctionꢀtoꢀAmbientꢀ
62.5ꢀ
ElectricalꢀCharacteristicsꢀ(ꢀTCꢀ=ꢀ25℃ Unlessꢀotherwiseꢀnoted)ꢀ
ꢀ
Ratingsꢀ
Minꢀ Typ.ꢀ Maxꢀ
Symbolꢀ
Itemsꢀ
Conditionsꢀ
Unitꢀ
BVDSS
ꢀ
DrainꢁSourceꢀBreakdownꢀVoltageꢀ
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ250uA
500ꢀ
ꢀ
ꢀ
ꢀ
Vꢀ
ΔBVDSSꢀ
/ΔTJꢀ
Breakdownꢀ
coefficientꢀ
Voltageꢀ
Temperatureꢀ
IDꢀ=250uA,ꢀReferenceꢀtoꢀ25℃ꢀ
0.6ꢀ
ꢀ
V/℃ꢀ
VDSꢀ=ꢀ500V,ꢀVGSꢀ=ꢀ0Vꢀ
1ꢀ
IDSS
ꢀ
ZeroꢀgateꢀvoltageꢀDrainꢀCurrentꢀ
ꢀ
ꢀ
uAꢀ
VDSꢀ=ꢀ400V,ꢀTSꢀ=ꢀ125℃ꢀ
10ꢀ
IGSSF
ꢀ
GateꢀbodyꢀleakageꢀcurrentꢀForwardꢀ
GateꢀbodyꢀleakageꢀcurrentꢀReverseꢀ
VGSꢀ=ꢀ30V,ꢀVDSꢀ=ꢀ0Vꢀ
VGSꢀ=ꢀꢁ30V,ꢀVDSꢀ=ꢀ0Vꢀ
ꢀ
ꢀ
ꢀ
ꢀ
100ꢀ
nAꢀ
nAꢀ
IGSSR
ꢀ
ꢁ100ꢀ
ꢀ
OnꢀCharacteristicsꢀ
ꢀ
VGS(th)
ꢀ
VGSꢀ=ꢀVDS,ꢀIDꢀ=ꢀ250uAꢀ
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ2.5Aꢀ
GateꢀThresholdꢀVoltageꢀ
2.0ꢀ
ꢀ
ꢀ
4.0ꢀ
Vꢀ
ꢂꢀ
RDS(ON)
ꢀ
StaticꢀDrainꢁSourceꢀOnꢁResistanceꢀ
1.1ꢀ 1.5ꢀ
ꢀ
DynamicꢀCharacteristicsꢀ
ꢀ
Ciss
ꢀ
InputꢀCapacitanceꢀ
ꢀ
525ꢀ
ꢀ
pFꢀ
VDSꢀ=ꢀ25ꢀV,ꢀVGSꢀ=ꢀ0Vꢀ
fꢀ=ꢀ1.0MHz
Coss
Crss
ꢀ
outputꢀCapacitanceꢀ
ꢀ
ꢀ
75ꢀ
15ꢀ
ꢀ
pFꢀ
pFꢀ
ReverseꢀTransferꢀCapacitanceꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2/5ꢀ
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
