SemiWell
Semiconductor
SFP830D
N-Channel MOSFET
Features
◆
◆
◆
◆
R
DS(ON)
Max 1.5 ohm at V
GS
= 10V
Gate Charge ( Typical 20nC)
Improve dv/dt capability, Fast switching
100% avalanche Tested
General Description
This MOSFET is produced using advanced planar strip
DMOS
technology.
This
latest
technology
has
been
especially designed to minimize on-state resistance have a
high rugged avalanche characteristics. These device are well
suited for high efficiency switch mode power supply active
power factor correction. Electronic lamp based on half bridge
topology
Absolute Maximum Ratings (T
J
= 25℃
unless otherwise specified)
Symbol
V
DSS
I
D
Drain-Source Voltage
Drain Current
T
C
=25℃
Parameter
Ratings
500
4.5
Units
V
A
T
C
=100℃
V
GSS
I
DM
E
AS
E
AR
dv/dt
P
D
T
j
, T
STG
Gate-Source Voltage
Drain Current
pulse
(Note 1)
(Note 2)
(Note 1)
(Note 3)
3
±
20
18
220
7.5
3.5
74
-45 ~ 150
V
A
mJ
mJ
V/ns
W
℃
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Power Dissipation T
C
=25℃
Operation and Storage Temperature range
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