SAMWIN
SW7N65
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Top :
VGS
15.0V
10.0V
9.0V
8.0V
6.0V
5.0V
101
101
100
10-1
Bottom :
150oC
100
25oC
-55oC
*. Notes :
*. Notes :
1. VDS = 50V
2. TC = 25oC
2. 250us Pulse Test
10-1
10-1
100
101
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
Fig. 4. On state current vs.
diode forward voltage
drain current and gate voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
101
VGS = 10V
VGS = 20V
100
150OC
25OC
*. Notes :
1. VGS = 0V
*. Note : TJ = 25OC
2. 250us Pulse Test
10-1
0.0
0
2
4
6
8
10
12
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID, Drain Current [A]
VSD, Source-Drain voltage[V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
3000
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
2750
2500
2250
2000
1750
1500
1250
1000
750
VDS = 520V
VDS = 325V
Crss=Cgd
10
8
*. Notes :
1. VGS = 0V
Ciss
2. f=1MHz
6
Coss
4
Crss
500
2
250
*. Note : ID = 7 A
0
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
3/7
SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
