SAMWIN
SW7N65
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
650
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.4
V/oC
/ ΔTJ
coefficient
VDS=650V, VGS=0V
VDS=520V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
20
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 3.5A
2.0
-
4.0
V
1.1
1.32
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
1200
110
30
1500
145
40
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
24
60
60
130
210
140
46
VDS=325V, ID=7.0A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
100
64
Qg
Total gate charge
Gate-source charge
Gate-drain charge
35
Qgs
Qgd
VDS=520V, VGS=10V, ID=7.0A
5.5
15
-
nC
-
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
7
28
1.4
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=7.0A, VGS=0V
-
V
Trr
500
2.8
ns
uC
IS=7.0A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 9mH, IAS = 7.0A, VDD = 50V, RG=50Ω, Starting TJ = 25oC
ISD ≤ 7.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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