Typical Characteristics
101
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 300us Pulse Test
2. TC = 25oC
-1
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
10
8
101
100
10-1
VGS = 10V
6
4
VGS = 20V
150 䉝
25䉝
2
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0V
ꢀꢀꢀꢇꢂꢀꢇꢃꢈȝ Vꢀ3XOVHꢀ7HVW
ꢀNote : TJ = 25oC
0
0
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
1500
1200
900
600
300
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 180V
VDS = 450V
VDS = 720V
C
C
iss
6
Coss
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. f = 1 MHz
4
C
rss
2
*
Note : ID = 2.2A
16
0
0
4
8
12
20
-1
10
100
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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