Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
V
DS = VGS, ID = 250 Ꮃ͑
GS = 10 V, ID = 1.0 A͑
2.5
--
4.5
5.6
V
RDS(ON) Static Drain-Source
On-Resistance
V
4.5
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 Ꮃ͑
ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
DS = 900 V, VGS = 0 V͑
900
--
--
--
--
V
ԩBVDSS Breakdown Voltage Temperature
1.0
·͠ఁ͑
/ԩTJ
Coefficient
IDSS
V
--
--
--
--
1
Ꮃ͑
Ꮃ͑
Zero Gate Voltage Drain Current
VDS = 720 V, TC = 125ఁ͑
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
--
--
100
Ꮂ͑
Ꮂ͑
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
-100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
700
70
7
910
90
9
Ꮔ͑
Ꮔ͑
Ꮔ͑
VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz͑
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Time
--
--
--
--
--
--
--
20
55
30
40
17
4.5
7.5
40
110
60
80
22
--
Ꭸ͑
Ꭸ͑
VDS = 450 V, ID = 2.2 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
͑
Ꭸ͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
Ꭸ͑
Qg
Qgs
Qgd
Οʹ͑
Οʹ͑
Οʹ͑
VDS = 720V, ID = 2.2 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
2.0
8.0
1.4
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V
--
V
Reverse Recovery Time
IS = 2.2 A, VGS = 0 V
400
1.6
Ꭸ͑
ȝ&
diF/dt = 100 A/ȝV (Note 4)
Reverse Recovery Charge
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=65mH, IAS=2.2A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISDꢇꢂꢈ$ꢉꢀGLꢊGWꢇꢈꢈ$ꢊȝVꢉꢀ9DD%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ꢀꢋꢈꢈȝVꢉꢀ'XW\ꢀ&\FOHꢀꢀꢇꢌ
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡
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