Typical Characteristics (continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μ A
0.9
* Notes :
1. VGS = 10 V
2. ID = 0.5 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
101
100
1.0
0.8
0.6
0.4
0.2
0.0
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
DC
-1
10
※ Notes :
1. TC = 25 o
2. TJ = 150 o
3. Single Pulse
C
C
-2
10
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
0.2
※ Notes :
1. Zθ (t) = 2.78 ℃/W M a x .
JC
2. Duty Factor, D=t1/t2
0.1
0.05
-1
3. TJM - TC = PDM * Zθ (t)
JC
0.02
0.01
10
PDM
t1
single pulse
t2
-5
10
-4
10
-3
10
-2
10
-1
10
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,April 2006