Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
20
15
10
VGS = 10V
VGS = 20V
※ Note : T = 25 ℃
J
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-Drain Voltage [V]
ID , Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
250
200
150
100
50
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
iss
C
VDS = 160V
VDS = 400V
VDS = 640V
6
Coss
4
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
※ Notes : ID = 1.0 A
0
10
0
-1
100
101
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,April 2006
SEMIHOW [ SEMIHOW CO.,LTD. ]
