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HFP6N90 参数 Datasheet PDF下载

HFP6N90图片预览
型号: HFP6N90
PDF下载: 下载PDF文件 查看货源
内容描述: 900V N沟道MOSFET [900V N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 1208 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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Typical Characteristics (continued)  
1.2  
1.1  
1.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Notes :  
1. VGS = 0 V  
2. ID = 250 μ A  
0.9  
Notes :  
1. VGS = 10 V  
2. ID = 3.0 A  
0.8  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Figure 8. On-Resistance Variation  
vs Temperature  
Figure 7. Breakdown Voltage Variation  
vs Temperature  
6
4
2
0
102  
101  
100  
Operation in This Area  
is Limited by R DS(on)  
10 us  
100 us  
1 ms  
10 ms  
DC  
-1  
10  
Notes :  
1. TC = 25 o  
2. TJ = 150 o  
3. Single Pulse  
C
C
-2  
10  
25  
50  
75  
100  
125  
150  
100  
101  
102  
103  
TC, Case Temperature [ ]  
VDS, Drain-Source Voltage [V]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs Case Temperature  
100  
D=0.5  
0.2  
Notes :  
1. Zθ (t) = 0.75 /W M a x .  
-1  
10  
JC  
2. Duty Factor, D=t1/t2  
0.1  
3. TJM - TC = PDM * Zθ (t)  
JC  
0.05  
PDM  
0.02  
0.01  
single pulse  
t1  
t2  
-2  
10  
-5  
10  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
100  
101  
t1, Square Wave Pulse Duration [sec]  
Figure 11. Transient Thermal Response Curve  
SEMIHOW REV.A0,Dec 2005