Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
101
150oC
Bottom : 5.5 V
25oC
-55oC
100
-1
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25 ℃
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
-1
10
-2
10
2
4
6
8
10
-1
10
100
101
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
4.5
4.0
3.5
3.0
2.5
2.0
1.5
101
VGS = 10V
VGS = 20V
100
150 ℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : T = 25 ℃
J
-1
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
3
6
9
12
15
18
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
2500
2000
1500
1000
500
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 180V
VDS = 450V
C
VDS = 720V
C
iss
6
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
4
2
C
rss
※ Note : ID = 6.0A
0
0
10
-1
100
101
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
