Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
10
101
Bottom : 5.0 V
25oC
150oC
1
-25oC
* Notes :
* Notes :
1. VDS= 30V
100
1. 300us Pulse Test
2. TC = 25oC
2. 300us Pulse Test
0.1
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
1.6
1.2
0.8
0.4
0.0
10
VGS = 10V
1
150oC
25oC
VGS = 20V
* Notes :
1. VGS= 0V
ꢀNote : TJ = 25oC
16
2. 300us Pulse Test
0.1
0.0
0
4
8
12
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12
10
8
4000
3000
2000
1000
0
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
VDS = 130V
VDS = 325V
VDS = 520V
C
Coss
6
* Note ;
1. VGS = 0 V
4
2. f = 1 MHz
C
iss
2
ꢀNote : ID = 7.3A
C
rss
0
-1
10
100
101
0
3
6
9
12
15
18
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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