Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
Gate Threshold Voltage
V
DS = VGS, ID = 250 Ꮃ
2.8
--
--
4.2
0.6
V
Static Drain-Source
On-Resistance
RDS(ON)
VGS = 10 V, ID = 3.5 A
0.54
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 Ꮃ
650
--
--
--
--
--
--
10
V
VDS = 650 V, VGS = 0 V
Ꮃ
Ꮃ
Ꮂ
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VDS = 520 V, TJ = 125
GS = ρ20 V, VDS = 0 V
--
100
ρ100
V
--
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
--
--
--
--
500
250
7
--
--
--
--
Ꮔ
Ꮔ
Ꮔ
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 0 V, VDS = 0 V, f = 1MHz
4
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Time
--
--
--
--
--
--
--
20
20
60
20
16
4.0
5.5
--
--
--
--
--
--
--
Ꭸ
Ꭸ
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS = 325 V, ID = 7.3 A,
RG = 25
Ꭸ
Ꭸ
Qg
Qgs
Qgd
nC
nC
nC
VDS = 520 V, ID = 7.3 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
ISM
VSD
trr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
7.3
22
1.3
--
A
Source-Drain Diode Forward Voltage IS = 7.3 A, VGS = 0 V
--
V
Reverse Recovery Time
IS = 3.5 A, VGS = 0 V
250
2
Ꭸ
uC
diF/dt = 100 A/ȝV
Reverse Recovery Charge
--
Qrr
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2A, VDD=50V, RG=25:, Starting TJ =25qC
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