SS2412
CMOS High Sensitivity Micropower Hall Latch
General Description
against the predefined thresholds. This device re-
The SS2412 latching Hall effect sensor IC is fabri-
cated from mixed signal CMOS technology. It incor-
porates advanced chopper-stabilization techniques to
provide accurate and stable magnetic switch points.
quires the presence of both south and north polarity
magnetic fields for operation. In the presence of a
south polarity field of sufficient strength, the device
output latches on, and only switches off when a north
polarity field of sufficient strength is present.
The circuit design provides an internally controlled
clocking mechanism to cycle power to the Hall ele-
ment and analog signal processing circuits. This
serves to place the high current-consuming portions
of the circuit into a “Sleep” mode. Periodically the
device is “Awakened” by this internal logic and the
magnetic flux from the Hall element is evaluated
While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been op-
timized for service in applications requiring extended
operating lifetime in battery powered systems.
Glossary of Terms
MilliTesla (mT), Gauss
RoHS
Units of magnetic flux density: 1mT = 10 Gauss
Restriction of Hazardous Substances
Magnetic flux density applied on the branded side of the package
Operating Point (BOP)
which turns the output driver ON (VOUT = VDSon
)
Release Point (BRP)
Magnetic flux density applied on the branded side of the package
which turns the output driver OFF (VOUT = high)
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V3.10 Nov 1, 2013
SECELECTRONICS [ SEC Electronics Inc. ]
