SS1636
Unipolar Hall Switch-High sensitivity
General Description
The SS1636 Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced
chopper-stabilization techniques to provide accurate and stable magnetic switch points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and
analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a
“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall
element is evaluated against the predefined thresholds. If the flux density is above or below the Bop/Brp thresholds
then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is
latched in its previous state. The design has been optimized for service in applications requiring extended operating
lifetime in battery powered systems.
Pin Definitions and Descriptions
TSOT Pin № SIP Pin № Name
Type
Function
1
2
3
1
3
2
VDD
Supply
Output
Ground
Supply Voltage pin
Open Drain Output pin
Ground pin
OUT
GND
Absolute Maximum Ratings
Parameter
Symbol
Value
Units
V
Supply Voltage
Supply Current
Output Voltage
Output Current
VDD
IDD
5.5
70
μA
V
VOUT
IOUT
5.5
5
mA
°C
°C
V
Operating Temperature Range TA
-40 to 150
-65 to 170
4000
Storage Temperature Range
ESD Sensitivity
TS
Operating Temperature Range Symbol
Value
Units
Temperature Suffix “E”
Temperature Suffix “K”
Temperature Suffix “L”
TA
TA
TA
-40 to 85
-40 to 125
-40 to 150
°C
°C
°C
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability.
2
V3.10 Nov 1, 2013
SECELECTRONICS [ SEC Electronics Inc. ]
