1HN04CH
⏐y
fs⏐ -- I
I
-- V
SD
D
S
1000
1000
V =10V
DS
7
V =0V
GS
7
5
5
3
2
3
2
100
7
5
100
3
2
7
5
10
7
5
3
2
3
2
10
7
5
1.0
7
5
3
2
3
2
1.0
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5 7
100
0
0.2
0.4
0.6
0.8
1.0
1.2
IT12904
1.0
10
Drain Current, I -- mA
IT12903
Diode Forward Voltage, V -- V
SD
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
7
5
5
f=1MHz
V
=50V
=10V
DD
3
2
V
GS
3
2
Ciss
1000
7
5
10
7
5
3
2
100
7
5
3
2
3
2
1.0
t (on)
d
7
5
10
7
5
t
r
3
1.0
3
2
3
5
7
2
3
5
7
0
10
20
30
40
50
60
70
80
90
100
10
100
IT12905
Drain Current, I -- mA
Drain-to-Source Voltage, V
-- V
IT12906
D
DS
V
-- Qg
A S O
GS
1.0
10
V
=50V
7
5
DS
I
=480mA
PW≤10µs
DP
9
8
7
6
5
4
3
2
I =120mA
D
3
2
I =120mA
100µs
D
0.1
7
5
3
2
Operation in this area
is limited by R (on).
0.01
7
5
DS
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
1
0
0.001
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.0
10
100
Total Gate Charge, Qg -- nC
IT12907
Drain-to-Source Voltage, V
DS
-- V
IT12908
P
-- Ta
D
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
IT12909
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
No. A0925-3/4
SANYO [ SANYO SEMICON DEVICE ]
