1HN04CH
Continued from preceding page.
Ratings
typ
Parameter
Symbol
t (on)
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
13
ns
ns
ns
ns
nC
nC
nC
V
d
t
r
7.8
87
Turn-OFF Delay Time
Fall Time
t (off)
d
t
f
60
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qg
V
V
V
=50V, V =10V, I =120mA
GS
1.6
DS
DS
DS
D
Qgs
Qgd
=50V, V =10V, I =120mA
GS
0.25
0.25
0.83
D
=50V, V =10V, I =120mA
GS
D
V
I =120mA, V =0V
1.2
SD
S
GS
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7015A-004
V =50V
DD
V
IN
10V
0V
2.9
3
0.15
0.05
I
=60mA
D
V
IN
R =833Ω
L
D
V
OUT
PW=10µs
D.C.≤1%
Rg
G
1
2
0.95
1 : Gate
2 : Source
3 : Drain
0.4
1HN04CH
P.G
50Ω
S
SANYO : CPH3
Rg=1.2kΩ
I
-- V
I
-- V
GS
D
DS
D
120
100
80
250
200
150
100
V =10V
DS
60
40
50
0
20
0
V
=2.5V
GS
0
0.1
=30mA
2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT12900
IT12899
DS
GS
R
(on) -- V
DS
R
(on) -- Ta
DS
16
14
12
10
8
16
14
12
10
8
Ta=25°C
I
D
60mA
6
6
4
4
2
0
2
0
0
4
6
8
10
12
14
16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
IT12901
Ambient Temperature, Ta -- °C
IT12902
No. A0925-2/4
SANYO [ SANYO SEMICON DEVICE ]
