S TM6913
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
Diode F orward Voltage
V
S D
V
G S = 0V, Is =1.7A
1.2
0.8
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
25
20
15
10
20
V
G S =10,9,8,7,6,5V
16
12
8
VG S =4V
-55 C
Tj=125 C
4
5
0
VG S =3V
25 C
3.2 4.0
0
0.0
0.8
1.6
2.4
4.8
2
0
4
6
8
10
12
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
VG S =10V
1.6
1.4
1200
V
G S =10V
=6A
1000
800
I
D
C iss
1.2
600
1.0
0.8
0.6
0
400
200
0
C oss
C rss
-50
0
25 50
100
-25
75
125 150
Tj=( C )
0
5
10
15
20
25
30
ID, Drain C urrent(A)
VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
Figure 3. C apacitance
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
