S TM4472
10
8
1200
VDS =20V
ID=7A
1000
800
Ciss
6
600
4
5
400
Coss
200
2
0
Crss
0
0
5
10
15
20
25
30
6
0
2
4
8
10
12 14 16
Qg, Total G ate C harge (nC )
VDS , Drain-to S ource Voltage (V)
Figure 10. G ate C harge
Figure 9. Capacitance
50
250
30
10
t
i
m
i
L
)
1
0
N
m
O
TD(off)
Tr
(
s
100
60
R DS
1
0
0
m
s
Tf
TD(on)
1
s
1
10
D
C
0.1
V
G S =10V
S ingle P ulse
=25 C
S =20V,ID=1A
VG S =10V
1
T
A
0.03
600
1
6
10
60 100 300
0.1
1
10 40
V
DS , Drain-S ource Voltage (V)
R g, G ate R esistance (Ω)
Figure 12. Maximum S afe
Operating Area
Figure 11.switching characteristics
9
1
0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R thJA (t)=r (t) * R thJA
th
2. R JA=S ee Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
