S TM4472
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
A
TypC Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
C ondition
Min
Unit
V
S ymbol
b
5
Diode Forward Voltage
0.78
VS D
VG S = 0V, Is =1.7A
1.2
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
45
15
12
GS =4.5V
V
GS =10V
V
36
27
18
GS =4V
V
-55 C
9
6
GS =3.5V
V
Tj=125
C
25 C
GS =3V
2.5
V
3
0
9
0
4.2
3.5
2.1
2.8
0.
0
0.7
1.4
3.0
0
2.0
1.0
1.5
0.5
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.75
1.60
1.45
1.30
1.15
1.00
0.85
48
40
32
VGS =10V
ID=7A
VGS =4.5V
VGS =10V
24
16
VGS =4.5V
ID=5A
8
1
0
75
150
1
25
50
100
125
4
8
12
16
20
Tj( C)
ID, Drain Current (A)
Tj, J unction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
