S TU/D410S
1.15
1.10
1.2
VDS =VG S
ID=250uA
1.1
ID=250uA
1.0
0.9
0.8
0.7
1.05
1.00
0.95
0.90
0.85
0.6
0.5
6
0
-50
25 50
-25
125 150
75 100
-50 -25
0
25 50 75 100 125 150
Tj, J unction Temperature ( C )
Tj, Junction Temperature ( C )
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. G ate Threshold Variation
with Temperature
54
20.0
ID=10A
45
125 C
25 C
10.0
36
125 C
27
75 C
18
75 C
25 C
9
0
1.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
VGS , Gate- S ource Voltage (V)
V
S D, Body Diode Forward Voltage (V)
Figure 7. On-R esistance vs.
Gate-S ource Voltage
Figure 8. Body Diode Forward Voltage
Variation with S ource C urrent
4