S TU/D410S
E LE C TR IC AL C HAR AC TE R IS TIC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC TE R IS TIC S
Diode Forward Voltage
VS D
VG S = 0V, Is = 8A
0.84
1.3
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
45
20
16
12
V
GS =10V
VGS =4.5V
36
27
18
9
VGS =4V
8
Tj=125
C
VGS =3.5V
25 C
4
0
VGS =3V
2.5
-55
C
0
4.0
4.8
0
0.8
1.6
2.4
3.2
1.5
2.0
3.0
0.5
1.0
0
VDS , Drain-to-S ource Voltage (V)
VGS , Gate-to-S ource Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.75
1.60
1.45
1.30
1.15
1.0
42
35
28
VGS =10V
ID=10A
VGS =4.5V
VGS =10V
21
14
VGS =4.5V
ID=8A
7
0
0.8
-25
1
9
36
27
45
0
150
100 125
18
25
50
75
Tj( C)
ID, Drain Current (A)
Tj, Junction Temperature ( C )
Figure 3. On-R esistance vs. Drain Current
and Gate Voltage
Figure 4. On-R esistance Variation with
Drain Current and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
