STB/P434S
Ver 1.0
100
60
48
36
24
VGS =10V
80
VGS =4V
VGS =3.5V
60
40
20
0
-55 C
VGS =3V
Tj=125 C
VGS =2.5V
25 C
3.5
12
0
0
0.7
1.4
2.1
2.8
4.2
0
0.5
1
2
3
1.5
2.5
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
20
2.0
VGS=10V
ID=30A
1.8
1.6
1.4
1.2
1.0
0
16
12
8
VGS=4.5V
VGS=10V
VGS=4.5V
ID=25A
4
1
1
20
40
60
80
100
0
25
50
75
100
125
150
°
Tj( C )
ID, Drain Current(A)
°
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.40
ID=250uA
VDS =VG S
1.4
1.30
ID=250uA
1.2
1.0
0.8
0.6
1.20
1.10
1.00
0.90
0.80
0.4
0.2
0
-50 -25
0
25 50
75 100 125 150
-50
25 50
-25
125 150
75 100
°
Tj, Junction Temperature( C )
°
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Nov,14,2008
www.samhop.com.tw
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
