STB/P434S
Ver 1.0
°
ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted
)
(
Parameter
Min
Max
Symbol
Conditions
Typ
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
uA
nA
VDS=32V , VGS=0V
1
VGS= 20V , VDS=0V
100
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
3
1.3
VGS(th)
VDS=VGS , ID=250uA
VGS=10V , ID=30A
VGS=4.5V , ID=25A
VDS=10V , ID=30A
1.7
7.6
8.8
18
V
9.2 m ohm
11.5 m ohm
S
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
CISS
1160
211
VDS=20V,VGS=0V
f=1.0MHz
Output Capacitance
COSS
CRSS
Reverse Transfer Capacitance
135
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
Rise Time
ns
ns
ns
17
24
59
11
20
10
2.1
5
VDD=20V
ID=1A
t
r
VGS=10V
RGEN=3.3 ohm
tD(OFF)
Turn-Off Delay Time
Fall Time
ns
t
f
VDS=20V,ID=30A,VGS=10V
VDS=20V,ID=30A,VGS=4.5V
nC
nC
nC
nC
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=20V,ID=30A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
10
A
Maximum Continuous Drain-Source Diode Forward Current
Diode Forward Voltage b
VSD
0.84
1.3
V
VGS=0V,IS=10A
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
_
c.Guaranteed by design, not subject to production testing.
°
d.Starting TJ=25 C,L=0.5mH,VDD = 20V.(See Figure13)
Nov,14,2008
www.samhop.com.tw
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
