2SA1008
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
VCEO(SUS)
VCEX(SUS)1
Conditions
MIN.
−100
−100
TYP.
MAX.
Unit
IC = −1.0 A, IB1 = −0.1 A, L = 1 mH
IC = −1.0 A, IB1 = −IB2 = −0.1 A,
Collector to emitter voltage
Collector to emitter voltage
V
V
VBE(OFF) = 5.0 V, L = 180 µH, clamped
IC = −2.0 A, IB1 = −0.2 A, IB2 = 0.1 A,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
−100
Collector to emitter voltage
VCEX(SUS)2
V
VCB = −100 V, IE = 0 A
VCE = −100 V, RBE = 51 Ω, TA = 125°C
VCE = −100 V, VBE(OFF) = 1.5 V
VCE = −100 V, VBE(OFF) = 1.5 V,
TA = 125°C
−10
−1.0
−10
µA
mA
µA
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
ICBO
ICER
ICEX1
ICEX2
−1.0
mA
VEB = −5.0 V, IC = 0 A
−10
µA
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
VCE = −5.0 V, IC = −0.1 ANote
VCE = −5.0 V, IC = −1.0 ANote
IC = −1.0 A, IB = −0.1 ANote
IC = −1.0 A, IB = −0.1 ANote
40
40
200
−0.6
−1.5
0.5
V
V
IC = −1.0 A, RL = 50 Ω,
IB1 = −IB2 = −0.1 A, VCC ≅ −50 V
Refer to the test circuit.
µs
µs
µs
Storage time
tstg
1.5
Fall time
tf
0.5
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
hFE2
M
L
K
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D14866EJ2V0DS
RENESAS [ RENESAS TECHNOLOGY CORP ]
