DATA SHEET
SILICON POWER TRANSISTOR
2SA1008
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
ORDERING INFORMATION
The 2SA1008 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
Part No.
2SA1008
Package
TO-220AB
FEATURES
(TO-220AB)
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2331
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
VCBO
Conditions
Ratings
−100
−100
−7.0
−2.0
−4.0
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
VCEO
V
VEBO
V
IC(DC)
A
PW ≤ 300 µs,
IC(pulse)
A
duty cycle ≤ 10%
−1.0
15
Base current (DC)
IB(DC)
PT
A
TC = 25°C
TA = 25°C
Total power dissipation
W
W
°C
°C
1.5
Junction temperature
Storage temperature
Tj
150
−55 to +150
Tstg
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14866EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
RENESAS [ RENESAS TECHNOLOGY CORP ]
