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16C6NL 参数 Datasheet PDF下载

16C6NL图片预览
型号: 16C6NL
PDF下载: 下载PDF文件 查看货源
内容描述: 瑞萨MCU [Renesas MCU]
分类和应用:
文件页数/大小: 70 页 / 529 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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Under development  
This document is under development and its contents are subject to change.  
M16C/6N Group (M16C/6NL, M16C/6NN)  
1. Overview  
Table 1.2 Functions and Specifications for M16C/6N Group (128-pin Version: M16C/6NN)  
Item  
Specification  
CPU  
91 instructions  
Number of fundamental  
instructions  
Minimum instruction execution time 41.7ns (f(BCLK) = 24 MHz, 1/1 prescaler, without software wait)  
Single-chip, memory expansion and microprocessor modes  
1 Mbyte  
Operating mode  
Address space  
Memory capacity  
Ports  
Refer to Table 1.3 Product Information  
Input/Output: 113 pins, Input: 1 pin  
Timer A: 16 bits 5 channels  
Timer B: 16 bits 6 channels  
Three-phase motor control circuit  
3 channels  
Peripheral  
Function  
Multifunction timers  
Serial interfaces  
(2)  
Clock synchronous, UART, I2C-bus (1), IEBus  
4 channels  
Clock synchronous  
A/D converter  
D/A converter  
DMAC  
10-bit A/D converter: 1 circuit, 26 channels  
8 bits 2 channels  
2 channels  
CRC calculation circuit  
CAN module  
Watchdog timer  
Interrupts  
CRC-CCITT  
1 channel with 2.0B specification  
15 bits 1 channel (with prescaler)  
Internal: 32 sources, External: 12 sources  
Software: 4 sources, Priority levels: 7 levels  
4 circuits  
Clock generation circuits  
Main clock oscillation circuit (*)  
Sub clock oscillation circuit (*)  
On-chip oscillator  
PLL frequency synthesizer  
(*) Equipped with on-chip feedback resistor  
Main clock oscillation stop and re-oscillation detection function  
VCC = 3.0 to 5.5 V  
Oscillation-stopped detector  
Supply voltage  
Electrical  
Characteristics  
(f(BCLK) = 24 MHz, 1/1 prescaler, without software wait)  
Consumption Mask ROM 19mA (f(BCLK) = 24 MHz, PLL operation, no division)  
Flash memory 21mA (f(BCLK) = 24 MHz, PLL operation, no division)  
Mask ROM 3µA (f(BCLK) = 32 kHz, Wait mode, Oscillation capacity Low)  
Flash memory 0.8µA (Stop mode, Topr = 25°C)  
current  
Flash Memory  
Version  
I/O  
3.3 0.3 V or 5.0 0.5 V  
100 times  
5.0 V  
5m A  
Programming and erasure voltage  
Programming and erasure endurance  
I/O withstand voltage  
Output current  
Characteristics  
Operating Ambient Temperature  
Device Configuration  
Package  
-40 to 85°C  
CMOS high-performance silicon gate  
128-pin molded-plastic LQFP  
NOTES:  
1. I2C-bus is a trademark of Koninklijke Philips Electronics N.V.  
2. IEBus is a trademark of NEC Electronics Corporation.  
Rev.2.10 Aug 25, 2006 page 3 of 67  
REJ03B0061-0210