The CoolSiC™ Schottky diodes generation 5 1200 V, 8 A is now available in a D2PAK real 2-pin package. Connecting SiC diodes in parallel and in a small device package, a high efficient system can be achieved while minimizing board space requirement. The elimination of the middle pin reduces a risk of partial discharge at high voltage and high frequency operation.
Infineon's StrongIRFET™ 2 power MOSFET 60 V features lowest RDS(on) of 1.05 mOhm, addressing a broad range of applications from low- to high-switching frequency.
This is a logic level 120 V MOSFET in PQFN 3.3 x 3.3 packaging with 10.6 mOhm on-resistance. ISZ106N12LM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
