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SS2625B1-7.5 参数 Datasheet PDF下载

SS2625B1-7.5图片预览
型号: SS2625B1-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 2MX36, 4.2ns, CMOS, PBGA119, PLASTIC, BGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 30 页 / 223 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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72Mbit Pipelined BSRAM  
w/ NoBL Architecture  
2Mx36  
Preliminary Data Sheet  
Electrical Characteristics  
Absolute Maximum Ratings  
Description  
Symbol  
VDD3  
VDD2  
VIN, VOUT  
TA  
Value  
Power Supply Voltage (3.3V device)  
Power Supply Voltage (2.5V device)  
Voltage on any Pin with Respect to Ground  
Operating Temperature (ambient)  
Storage Temperature  
-0.5V to +4.6V  
-0.5V to +3.6V  
-0.5V to VDDQ +0.5V  
-55°C to +125°C  
Tstg  
-65°C to +150°C  
Power Dissipation  
PD  
1.2 W (TQFP), 1.6 W (PBGA)  
20mA  
DC Output Current (I/O pins)  
IOUT  
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating  
only, and the functional operation of the device at these, or any other conditions above those listed in the operational section of the  
specification, is not implied. Exposure to conditions at absolute maximum ratings for extended periods may affect device reliability.  
DC Characteristics (TA = 0°C to 70°C)  
Symbol  
VDD3  
VDDQ3  
VDD2  
VDDQ2  
VIHDQ  
VIH1  
Parameter  
Power Supply Voltage  
Min  
3.135  
2.375  
2.375  
2.375  
2.0  
Typical  
Max  
3.465  
3.465  
2.625  
2.625  
VDDQ + 0.3  
VDD + 0.3  
0.8  
Units  
V
Notes  
3.3  
1
1
2
2
I/O Supply Voltage  
-
V
Power Supply Voltage  
2.5  
V
I/O Supply Voltage  
2.5  
V
Input High Voltage (DQ pins)  
Input High Voltage (Input-only pins)  
Input Low Voltage  
-
-
-
-
-
-
-
-
-
-
-
V
2.0  
V
1, 3  
1, 3  
2, 4  
2, 4  
3
VIL1  
-0.3  
1.7  
V
VIH2  
Input High Voltage (Input-only pins)  
Input Low Voltage  
VDD + 0.3  
0.7  
V
VIL2  
-0.3  
2.4  
V
VOH3  
VOL3  
VOH2  
VOL2  
II(L)  
Output High Voltage (IOUT = -4mA)  
Output Low Voltage (IOUT = +8mA)  
Output High Voltage (IOUT = -4mA)  
Output Low Voltage (IOUT = +4mA)  
Input Leakage Current  
VDDQ  
V
VSS  
2.0  
0.4  
V
3
VDDQ  
V
4
VSS  
-
0.4  
V
4
±5  
µA  
µA  
IO(L)  
Output Leakage Current  
-
±5  
Notes:  
1. Applies to SM2625Q and SM2625B 3.3V devices.  
2. Applies to SM2625Q1 and SM2625B1 2.5V devices.  
3. VDDQ = 3.3V ± 5%.  
4. VDDQ = 2.5V ± 5%.  
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921  
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com  
Copyright 2001 Enhanced Memory Systems. All rights reserved.  
The information contained herein is subject to change without notice.  
Page 8 of 30  
Revision 1.0