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SS2625B1-7.5 参数 Datasheet PDF下载

SS2625B1-7.5图片预览
型号: SS2625B1-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: [ZBT SRAM, 2MX36, 4.2ns, CMOS, PBGA119, PLASTIC, BGA-119]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 30 页 / 223 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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72Mbit Pipelined BSRAM  
w/ NoBL Architecture  
2Mx36  
Preliminary Data Sheet  
Truth Table  
Operation  
Deselect  
Address Used  
CLK  
CKE#  
CE  
F
LD#  
L
R/W#  
BWX#  
Notes  
1, 2  
2
N/A  
External  
Next  
L
L
L
L
L
H
X
H
X
L
X
X
X
V
V
X
Begin Read  
Continue Read  
Begin Write  
Continue Write  
Suspend  
T
L
X
H
External  
Next  
T
L
2, 3  
3
X
H
X
X
Current  
X
X
4
Notes:  
1. A deselect cycle is complete in four clocks.  
2. T = True and F = False. CE is true when CE1# and CE3# are low and CE2 is high. CE is false when CE1# is high or CE2 is low or CE3# is  
high.  
3. V = Valid. During write cycles, the BWX# inputs must be valid (high or low) throughout the burst cycle.  
4. If suspend occurs during a read, the DQ bus remains active (low-Z). During write and deselect cycles, the DQ bus remains in a high-Z state. No  
write operations are performed during suspend.  
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921  
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com  
Copyright 2001 Enhanced Memory Systems. All rights reserved.  
The information contained herein is subject to change without notice.  
Revision 1.0  
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