168-pin Low Profile Registered SDRAM DIMMs
256MB, 512MB, 1GB
Preliminary Data Sheet
Electrical Characteristics
Absolute Maximum Ratings
Description
Symbol
Value
Power Supply Voltage
VDD
VIN, VOUT
TA
-1V to +4.6V
Voltage on any Pin with Respect to Ground
Operating Temperature (ambient)
-0.5V to +4.6V
0°C to +70°C
Storage Temperature
Power Dissipation
Tstg
PD
-55°C to +125°C
TBD
DC Output Current (I/O pins)
IOUT
50mA
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating
only, and the functional operation of the device at these, or any other conditions above those listed in the operational section of the
specification, is not implied. Exposure to conditions at absolute maximum ratings for extended periods may affect device reliability.
DC Operating Conditions (TA = 0°C to 70°C)
Symbol
Parameter
Min
Typical
Max
Units
Notes
VDD
VIH
VIL
II(L)
Supply Voltage
3.0
2.0
-0.3
-
3.3
3.3
0.0
-
3.6
VDD + 0.3
0.8
V
V
Input High Voltage
Input Low Voltage
Input Leakage Current
V
±1
mA
IO(L)
VOH
VOL
Output Leakage Current
-
-
-
-
±1
VDD
0.4
mA
V
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = +4mA)
2.4
0.0
V
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V ±0.3V, not 100% tested)
Symbol
Parameter
256MB/512MB
1GB
Units
ECC
ECC
CIn1
CIn2
CIn3
CIn4
CIn5
CIn6
CI/O1
CI/O2
Input Capacitance (BA1, BA0, A0-12, RAS, CAS, WE, S0-3)
Input Capacitance (REGE)
8
5
15
5
pF
pF
pF
pF
pF
pF
pF
pF
Input Capacitance (CK0)
20
8
20
15
15
12
10
16
Input Capacitance (CKE0)
Input Capacitance (DQMB0-7)
Input Capacitance (SCL, SA0-2)
I/O Capacitance (SDA)
8
12
10
8
I/O Capacitance (DQ0-63, CB0-7)
Enhanced Memory Systems Inc., 1850 Ramtron Dr., Colo Spgs, CO 80921
PHONE: (800) 545-DRAM; FAX: (719) 488-9095; http://www.edram.com
2001 Enhanced Memory Systems. All rights reserved.
The information contained herein is subject to change without notice.
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Revision 1.1
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
