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FM25040A-GTR 参数 Datasheet PDF下载

FM25040A-GTR图片预览
型号: FM25040A-GTR
PDF下载: 下载PDF文件 查看货源
内容描述: [Memory Circuit, 512X8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 13 页 / 288 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
 浏览型号FM25040A-GTR的Datasheet PDF文件第4页浏览型号FM25040A-GTR的Datasheet PDF文件第5页浏览型号FM25040A-GTR的Datasheet PDF文件第6页浏览型号FM25040A-GTR的Datasheet PDF文件第7页浏览型号FM25040A-GTR的Datasheet PDF文件第9页浏览型号FM25040A-GTR的Datasheet PDF文件第10页浏览型号FM25040A-GTR的Datasheet PDF文件第11页浏览型号FM25040A-GTR的Datasheet PDF文件第12页  
FM25040A  
CS  
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op-code  
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Data  
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SI  
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MSB  
LSB MSB  
LSB  
SO  
Hi-Z  
Figure 9. Memory Write  
CS  
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Data Out  
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Hi-Z  
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MSB  
LSB  
LSB  
Figure 10. Memory Read  
should not be located within the same row. In the  
FM25040A, there are 128 rows each 32 bits wide.  
Regardless, FRAM read and write endurance is  
effectively unlimited at the 20 MHz clock speed.  
Even at 2000 accesses per second to the same row, 15  
years time will elapse before 1012 endurance cycles  
occur.  
Endurance  
Internally, a FRAM operates with a read and restore  
mechanism similar to DRAM. Therefore,  
a
endurance cycles are applied for each access: read or  
write. The FRAM architecture is based on an array of  
rows and columns. Each access causes an endurance  
cycle for an entire row. Therefore, data locations  
targeted for substantially differing numbers of cycles  
Rev. 3.2  
Feb. 2011  
Page 8 of 13