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FM24VN05-GTR 参数 Datasheet PDF下载

FM24VN05-GTR图片预览
型号: FM24VN05-GTR
PDF下载: 下载PDF文件 查看货源
内容描述: 512KB串行3V F-RAM存储器 [512Kb Serial 3V F-RAM Memory]
分类和应用: 存储内存集成电路光电二极管
文件页数/大小: 15 页 / 200 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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FM24V05 - 512Kb I2C FRAM  
Overview  
Two-wire Interface  
The FM24V05 is a family of serial F-RAM memory  
devices. The memory array is logically organized as a  
65,536 x 8 bit memory array and is accessed using an  
industry standard two-wire (I2C) interface. Functional  
operation of the F-RAM is similar to serial  
EEPROM. The major difference between the  
FM24V05 and serial EEPROM is F-RAM’s superior  
write performance.  
The FM24V05 employs a bi-directional two-wire bus  
protocol using few pins or board space. Figure 2  
illustrates a typical system configuration using the  
FM24V05 in a microcontroller-based system. The  
industry standard two-wire bus is familiar to many  
users but is described in this section.  
By convention, any device that is sending data onto  
the bus is the transmitter while the target device for  
this data is the receiver. The device that is controlling  
the bus is the master. The master is responsible for  
generating the clock signal for all operations. Any  
device on the bus that is being controlled is a slave.  
The FM24V05 always is a slave device.  
Memory Architecture  
When accessing the FM24V05, the user addresses  
65,536 locations each with 8 data bits. These data bits  
are shifted serially. The 65,536 addresses are  
accessed using the two-wire protocol, which includes  
a slave address (to distinguish other non-memory  
devices) and a 2-byte address. All 16 address bits are  
used by the decoder for accessing the memory.  
The bus protocol is controlled by transition states in  
the SDA and SCL signals. There are four conditions  
including start, stop, data bit, or acknowledge. Figure  
3 illustrates the signal conditions that specify the four  
states. Detailed timing diagrams are shown in the  
electrical specifications section.  
The access time for memory operation is essentially  
zero beyond the time needed for the serial protocol.  
That is, the memory is read or written at the speed of  
the two-wire bus. Unlike an EEPROM, it is not  
necessary to poll the device for a ready condition  
since writes occur at bus speed. That is, by the time a  
new bus transaction can be shifted into the part, a  
write operation will be complete. This is explained in  
more detail in the interface section below.  
VDD  
Rmin = 1.1 Kohm  
Rmax = tR/Cbus  
Microcontroller  
Users expect several obvious system benefits from  
the FM24V05 due to its fast write cycle and high  
endurance as compared with EEPROM. However  
there are less obvious benefits as well. For example  
in a high noise environment, the fast-write operation  
is less susceptible to corruption than an EEPROM  
since it is completed quickly. By contrast, an  
EEPROM requiring milliseconds to write is  
vulnerable to noise during much of the cycle.  
SDA SCL  
FM24V05  
SDA  
FM24V05  
A0 A1 A2  
SCL  
A0 A1 A2  
Figure 2. Typical System Configuration  
Note that it is the user’s responsibility to ensure that  
VDD is within datasheet tolerances to prevent  
incorrect operation.  
Rev. 1.1  
Feb. 2009  
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