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FM18L08-70-TG 参数 Datasheet PDF下载

FM18L08-70-TG图片预览
型号: FM18L08-70-TG
PDF下载: 下载PDF文件 查看货源
内容描述: 256KB的字节宽度FRAM存储器 [256Kb Bytewide FRAM Memory]
分类和应用: 存储内存集成电路光电二极管
文件页数/大小: 13 页 / 126 K
品牌: RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
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A10-A14  
Block Decoder  
32,768 x 8 FRAM Array  
Column Decoder  
Address  
Latch  
A0-A14  
A0-A7  
Row  
Decoder  
CE  
A8-A9  
Control  
Logic  
WE  
OE  
I/O Latch  
Bus Driver  
DQ0-7  
Figure 1. Block Diagram  
Pin Description  
Pin Name  
Type  
Pin Description  
A0-A14  
Input  
Address: The 15 address lines select one of 32,768 bytes in the FRAM array. The  
address value is latched on the falling edge of /CE.  
DQ0-7  
/CE  
I/O  
Input  
Data: 8-bit bi-directional data bus for accessing the FRAM array.  
Chip Enable. /CE selects the device when low. Asserting /CE low causes the address  
to be latched internally. Address changes that occur after /CE goes low will be  
ignored until the next falling edge occurs.  
/OE  
Input  
Input  
Output Enable: Asserting /OE low causes the FM18L08 to drive the data bus when  
valid data is available. Deasserting /OE high causes the DQ pins to be tri-stated.  
Write Enable: Asserting /WE low causes the FM18L08 to write the contents of the  
data bus to the address location latched by the falling edge of /CE.  
/WE  
VDD  
VSS  
Supply Supply Voltage  
Supply Ground  
Functional Truth Table  
/CE  
H
L
L
/WE  
Function  
Standby/Precharge  
Latch Address (and Begin Write if /WE=low)  
Read  
X
X
H
Write  
Note: The /OE pin controls only the DQ output buffers.  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 3.4  
July 2007  
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