Electrical Characteristics
T = 0 - 70°C (Commercial), -40 to 85°C (Industrial)
A
3.3V Option
Symbol
Parameters
Supply Voltage
Max
Min
Test Conditions
Max
3.6V
Min
V
3.0V
4.75V
5.25V
Vcc+0.5V
0.8V
All Voltages Referenced to V
SS
CC
V
Input High Voltage
Input Low Voltage
Output High Level
Output Low Level
2.0V
Vss-0.3V
2.4V
V +0.3V 2.4V
IH
CC
V
0.8V Vss-0.5V
2.4V
IL
VOH
VOL
Ii(L)
IOUT = - 5mA (-2ma For 3.3 Volt Option)
IOUT = 4.2mA (2ma For 3.3 Volt Option)
0.4V
0.4V
90µA
90µA
Input Leakage Current
Output Leakage Current
-45µA
-45µA
45µA
45µA
-90µA
-90µA
OV ≤ V ≤ Vcc + 0.5 Volts
IN
IO(L)
O ≤ VI/O ≤ Vcc
Operating Current — DM1M32SJ
33MHz Typ(1)
880mA
-15 Max
Symbol
Operating Current
Random Read
-12 Max
Test Condition
Notes
I
1800mA 1440mA /RE, /CAL, /G and Addresses Cycling: t = t Minimum
2, 3
CC1
C
C
I
Fast Page Mode Read
Static Column Read
Random Write
520mA
1160mA
880mA
920mA /CAL, /G and Addresses Cycling: t = t Minimum
2, 4
2, 4
2, 3
2, 4
PC PC
CC2
I
440mA
1080mA
400mA
8mA
720mA
/G and Addresses Cycling: t = t Minimum
SC SC
CC3
I
1520mA
/RE, /CAL, /WE and Addresses Cycling: t = t Minimum
1200mA
C
C
CC4
I
Fast Page Mode Write
1080mA 840mA
/CAL, /WE and Addresses Cycling: t = t Minimum
PC PC
CC5
I
Standby
8mA
8mA
All Control Inputs Stable
/S, /F, W/R, /WE and A
V
- 0.2V
≥
CC6
CC
at
V -0.2V,
CC
≥
I
0-10
Self-Refresh (-L Option)
1.6mA
1.6mA
1.6mA
CC7
/RE and /CAL at
V
<
+ 0.2V, I/O Open
SS
I
1
Average Typical
Operating Current
240mA
—
—
See "Estimating EDRAM Operating Power" Application Note
CCT
Operating Current — DM1M36SJ
Symbol
Operating Current
Random Read
33MHz Typ (1)
990mA
-15 Max
-12 Max
Test Condition
Notes
ICC1
2025mA 1620mA /RE, /CAL, and Addresses Cycling: tC = tC Minimum
1305mA 1035mA /CAL and Addresses Cycling: tPC = tPC Minimum
2, 3, 5
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
Fast Page Mode Read
Static Column Read
Random Write
585mA
2, 4, 5
2, 4, 5
2, 3
495mA
1215mA
450mA
9mA
990mA
810mA Addresses Cycling: tSC = tSC Minimum
/RE, /CAL, /WE, and Addresses Cycling: tC = tC Minimum
1710mA
1350mA
Fast Page Mode Write
1215mA 945mA /CAL, /WE, and Addresses Cycling: tPC = tPC Minimum
2, 4
9mA
9mA
Standby
All Control Inputs Stable ≥ VCC - 0.2V, Output Driven
Self-Refresh
Option (-L)
/S, /F, W/R, /WE, and A0-10 at ≥ VCC - 0.2V
/RE and /CAL at ≤ VSS + 0.2V, I/O Open
1.8mA
270mA
1.8mA
—
1.8mA
—
ICCT
1
Average Typical
See “Estimating EDRAM Operating Power” Application Note
Operating Current
(1) “33MHz Typ” refers to worst case I expected in a system operating with a 33MHz memory bus. See power applications note for further details. This parameter is not 100% tested
CC
or guaranteed. (2) I is dependent on cycle rates and is measured with CMOS levels and the outputs open. (3) I is measured with a maximum of one address change while
CC
CC
/RE = V . (4) I is measured with a maximum of one address change while /CAL = V . (5) /G is high.
IL
CC
IH
2-82
RAMTRON [ RAMTRON INTERNATIONAL CORPORATION ]
