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P4C1048L-45PM 参数 Datasheet PDF下载

P4C1048L-45PM图片预览
型号: P4C1048L-45PM
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗512K ×8 CMOS静态RAM [LOW POWER 512K x 8 CMOS STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 157 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P4C1048L  
TIMING WAVEFORM OF WRITE CYCLE NO.2 (CE CONTROLLED)(6)  
AC TEST CONDITIONS  
TRUTH TABLE  
Power  
Mode  
Standby  
CE OE WE  
I/O  
Input Pulse Levels  
GND to 3.0V  
3ns  
H
L
L
L
X
H
High Z  
High Z  
X
H
H
L
Standby  
Active  
Active  
Active  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
1.5V  
DOUT Disabled  
DOUT  
DIN  
1.5V  
Read  
Write  
L
X
See Fig. 1 and 2  
Figure 1. Output Load  
Figure 2. Thevenin Equivalent  
* including scope and test fixture.  
Note:  
To avoid signal reflections, proper termination must be used; for example,  
a 50test environment should be terminated into a 50load with 1.77V  
(Thevenin Voltage) at the comparator input, and a 589resistor must be  
used in series with DOUT to match 639(Thevenin Resistance).  
Because of the high speed of the P4C1048L, care must be taken when  
testing this device; an inadequate setup can cause a normal functioning  
part to be rejected as faulty. Long high-inductance leads that cause  
supply bounce must be avoided by bringing the VCC and ground planes  
directly up to the contactor fingers. A 0.01 µF high frequency capacitor  
is also required between VCC and ground.  
Document # SRAM129 REV D  
Page 7 of 12