欢迎访问ic37.com |
会员登录 免费注册
发布采购

P4C1048L-55CWMB 参数 Datasheet PDF下载

P4C1048L-55CWMB图片预览
型号: P4C1048L-55CWMB
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗512K ×8 CMOS静态RAM [LOW POWER 512K x 8 CMOS STATIC RAM]
分类和应用:
文件页数/大小: 12 页 / 157 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C1048L-55CWMB的Datasheet PDF文件第2页浏览型号P4C1048L-55CWMB的Datasheet PDF文件第3页浏览型号P4C1048L-55CWMB的Datasheet PDF文件第4页浏览型号P4C1048L-55CWMB的Datasheet PDF文件第5页浏览型号P4C1048L-55CWMB的Datasheet PDF文件第7页浏览型号P4C1048L-55CWMB的Datasheet PDF文件第8页浏览型号P4C1048L-55CWMB的Datasheet PDF文件第9页浏览型号P4C1048L-55CWMB的Datasheet PDF文件第10页  
P4C1048L  
AC CHARACTERISTICS - WRITE CYCLE  
(Over Recommended Operating Temperature & Supply Voltage)  
-45  
-55  
-70  
-100  
Symbol  
tWC  
Parameter  
Unit  
ns  
Min Max Min  
Max  
Min  
Max  
Min Max  
Write Cycle Time  
45  
55  
70  
100  
Chip Enable Time  
to End of Write  
tCW  
ns  
35  
40  
60  
60  
0
75  
Address Valid to  
End of Write  
tAW  
tAS  
35  
0
40  
0
75  
0
ns  
ns  
ns  
Address Set-up  
Time  
tWP  
Write Pulse Width  
35  
40  
50  
60  
Address Hold  
Time  
tAH  
ns  
0
0
0
0
Data Valid to End  
of Write  
tDW  
tDH  
tWZ  
25  
0
30  
0
35  
0
45  
0
ns  
ns  
ns  
Data Hold Time  
Write Enable to  
Output in High Z  
18  
20  
25  
35  
Output Active from  
End of Write  
tOW  
5
5
5
5
ns  
WRITE CYCLE NO. 1 (WE CONTROLLED)(6,7)  
Notes:  
6. CE and WE are LOW for WRITE cycle.  
7. OE is LOW for this WRITE cycle to show tWZ and tOW  
.
8. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state.  
9. Write Cycle Time is measured from the last valid address to the first transitioning address.  
Document # SRAM129 REV D  
Page 6 of 12