P4C1041
POWER DISSIPATIOꢁ CHARACTERISTICS VS. SPEED
Sym
Parameter
Temperature Range
Commercial
Industrial
-10
100
100
N/A
-12
90
-15
80
-20
70
70
90
ꢀnit
mA
mA
mA
ICC
Dynamic Operating Current*
90
80
Military
110
100
*VCC = 3.6V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
AC ELECTRICAL CHARACTERISTICS—READ CꢂCLE
(VCC = 5.0V ± 10%, All Temperature Ranges) (2)
-10
-12
-15
-20
Sym
Parameter
Read Cycle Time
ꢀnit
Min
Max
Min
Max
Min
Max
Min
Max
tRC
tAA
10
12
15
20
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
10
10
12
12
15
15
20
20
tAC
Chip Enable Access Time
tOH
tLZ
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Data Valid
Output Enable Low to Low Z
Output Enable High to High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
Byte Enable to Data Valid
3
3
3
3
3
3
3
3
tHZ
5
5
6
6
7
7
8
8
tOE
tOLZ
tOHZ
tPU
0
0
0
0
0
0
0
0
5
6
7
8
tPD
10
5
12
6
15
7
20
8
tBE
tLZBE
tHZBE
Byte Enable to Low Z
0
0
0
0
Byte Disable to High Z
6
6
7
8
Document # SRAM133 REV B
Page 3 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
