P4C1024L - LOW POWER 128K X 8 CMOS STATIC RAM
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
Symbol
Parameter
Write Cycle Time
Unit
Min
Max
Min
Max
tWC
tCW
tAW
tAS
55
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable Time to End of Write
Address Valid to End of Write
Address Set-up Time
50
50
0
60
60
0
tWP
tAH
tDW
tDH
tWZ
tOW
Write Pulse Width
40
0
50
0
Address Hold Time
Data Valid to End of Write
Data Hold Time
25
0
30
0
Write Enable to Output in High Z
Output Active from End of Write
25
30
5
5
WRITE CYCLE NO. 1 (WE CONTROLLED)(6)
Notes:
6. CE1 and WE are LOW and CE2 is HIGH for WRITE cycle.
7. OE is LOW for this WRITE cycle to show twz and tow.
8. If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in a high impedance state.
9. Write Cycle Time is measured from the last valid address to the first transitioning address.
Document # SRAM125 REV G
Page 5
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
