P4C1024L - LOW POWER 128K X 8 CMOS STATIC RAM
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol Parameter
Test Conditions
Max
Unit
CIN
Input Capacitance
Output Capacitance
VIN=0V
7
pF
COUT
VOUT=0V
9
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
*
**
Symbol Parameter
Temperature Range
Unit
-55
-70
-55
-70
Commercial
70
70
15
15
25
mA
mA
ICC
Dynamic Operating Current
Industrial/Military
85
85
25
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE2 ≥ VIH (min), CE1 and WE ≤ VIL (max), OE is high. Switching inputs are 0V
and 3V.
**As above but @ f=1 MHz and VIL/ VIH = 0V/ VCC
.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
Symbol Parameter
Min
Unit
Max
Min
Max
tRC
tAA
tAC
tOH
tLZ
Read Cycle Time
55
70
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
55
55
70
70
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Data Valid
Output Enable Low to Low Z
Output Enable High to High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
5
5
10
10
tHZ
tOE
tOLZ
tOHZ
tPU
tPD
20
30
25
35
5
0
5
0
20
55
25
70
Document # SRAM125 REV G
Page 3
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