P3C1011
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 3.3V ± 0.3V, All Temperature Ranges)(2)
-10
-12
-15
-20
-25
-35
Parameter
Unit
Sym.
Max
Min Max Min Max Min
Min Max Min Max Min Max
tWC
tCW
10
7
15
10
Write Cycle Time
12
8
20
10
35
15
25
12
ns
ns
Chip Enable Time to End of
Write
tAW
tAS
Address Valid to End of Write
7
8
10
10
12
15
ns
Address Set-up Time to Write
Start
0
7
0
5
0
8
0
6
0
10
0
0
10
0
0
12
0
0
15
0
ns
ns
ns
ns
tWP
tAH
tDW
Write Pulse Width
AddressHoldTime
Data Valid to End of Write
7
8
10
12
tDH
tWZ
DataHoldTime
0
0
0
0
0
0
ns
Write Enable to Output in High Z
5
6
7
8
10
12 ns
tOW
Output Active from End of Write
3
3
3
3
3
3
3
3
3
3
3
3
ns
ns
tLZWE WE High to Low Z
tBW Byte Enable to End of Write
7
8
10
10
15
ns
12
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (CE CONTROLLED)
Document # SRAM131 REV OR
Page 5 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
