November 2006
rev 0.3
ASM2P2310A
Electrical Characteristics
Over recommended operating free-air temperature range (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ1 Max Unit
Input voltage
-1.2
±5
V
VIK
VDD = 3V,
VI = 0V or VDD
II = -18 mA
Input current
µA
µA
pF
pF
II
IDD
2
Static device current
Input capacitance
Output capacitance
80
CLK = 0V or VDD
,
IO = 0 mA
2.5
2.8
CI
CO
VDD = 2.3V to 3.6V,
VDD = 2.3V to 3.6V,
VI = 0V or VDD
VI = 0V or VDD
Note: 1 All typical values are at respective nominal VDD
.
2 For ICC over frequency, see Figure 6.
VDD = 3.3 V ±0.3 V
Symbol
Parameter
Test Conditions
Min
VDD - 0.2
Typ1
Max
Unit
VDD = Min to Max, IOH = -100 µA
VOH
High-level output voltage
V
IOH = -12 mA
2.1
2.4
VDD = 3 V
IOH = -6 mA
VDD = Min to Max, IOL = -100 µA
IOL = 12mA
0.2
0.8
VOL
Low-level output voltage
High-level output current
V
VDD = 3V
IOL = 6 mA
0.55
VDD = 3V,
VO = 1V
-28
28
IOH
VDD = 3.3V,
VO = 1.65V
VO = 3.135V
VO = 1.95V
-36
36
mA
mA
VDD = 3.6V,
-14
VDD = 3V,
IOL
Low-level output current
VDD = 3.3V,
VO = 1.65V
VO = 0.4V
VDD = 3.6V,
14
Note: 1 All typical values are at respective nominal VDD
.
VDD = 2.5 V ±0.2 V
Symbol
Parameter
Test Conditions
Min
Typ1
Max Unit
VDD - 0.2
VDD = Min to Max,
VDD = 2.3V
VDD = Min to Max,
VDD = 2.3V
VDD = 2.3V,
IOH = -100 µA
IOH = -6 mA
IOL = 100 µA
IOL = 6 mA
VO = 1V
VOH
High-level output voltage
V
1.8
-17
17
0.2
V
VOL
Low-level output voltage
High-level output current
0.55
IOH
mA
-10
-25
25
VDD = 2.5V,
VDD = 2.7V,
VDD = 2.3V,
VO = 1.25V
VO = 2.375V
VO = 1.2V
IOL
Low-level output current
mA
10
VDD = 2.5V,
DD = 2.7V,
VO = 1.25V
VO = 0.3V
V
Note: 1 All typical values are at respective nominal VDD
.
2.5-V TO 3.3-V High-Performance Clock Buffer
5 of 11
Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
