July 2005
ASM2I99446
rev 0.4
Table 5: General Specifications
Symbol
VTT
MM
Characteristics
Min
Typ
VCC ÷2
Max
Unit Condition
Output Termination Voltage
ESD Protection (Machine Model)
ESD Protection (Human Body Model)
Latch–Up Immunity
V
200
2000
200
V
HBM
LU
V
mA
CPD
CIN
Power Dissipation Capacitance
Input Capacitance
10
4.0
pF
pF
Per output
Table 6: DC CHARACTERISTICS (VCC = VCCA = VCCB = VCCC = 3.3V ±5%, TA = –40°C to +85°C)
Symbol Characteristics
Min
2.0
-0.3
Typ
Max
VCC + 0.3
0.8
Unit
Condition
LVCMOS
LVCMOS
VIH
VIL
IIN
Input High Voltage
Input Low Voltage
Input Current 1
V
V
µA
V
V
V
200
VIN=GND or VIN=VCC
VOH
Output High Voltage
2.4
IOH=-24 mA2
0.55
0.30
IOL= 24mA3
IOL= 12mA
VOL
Output Low Voltage
ZOUT
ICCQ
Output Impedance
Maximum Quiescent Supply Current
14 - 17
Ω
3
2.0
mA
All VCC Pins
Note: 1 Input pull-up / pull-down resistors influence input current.
2 The ASM2I99446 is capable of driving 50ꢀ transmission lines on the incident edge. Each output drives one 50ꢀ parallel terminated transmission line
to a termination voltage of VTT. Alternatively, the device drives up to two 50ꢀ series terminated transmission lines.
3 ICCQ is the DC current consumption of the device with all outputs open and the input in its default state or open.
2.5V and 3.3V LVCMOS Clock Distribution Buffer
4 of 14
Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
