June 2005
ASM2P3807AH
rev 0.2
Capacitance (TA = +25°C, f = 1.0MHz)
Symbol
Parameter1
Conditions
Typ.
Max.
Unit
CIN
Input Capacitance
VIN= 0V
4.5
6
pF
COUT
Output Capacitance
VOUT = 0V
5.5
8
pF
Note:1. This parameter is measured at characterization but not tested.
Power Supply Characteristics
Symbol
Parameter
Test Conditions1
Min
Typ2
Max
Unit
V
CC= Max.
Quiescent Power Supply
Current TTL Inputs HIGH
∆ICC
-
10
30
µA
V
IN = VCC –0.6V3
VCC= Max.
Input toggling
50% Duty Cycle
Outputs Open
mA/
VIN = VCC
Dynamic Power Supply
Current4
MHz
ICCD
-
-
0.31
0.45
VIN = GND
VCC= Max.
Input toggling
50% Duty Cycle
Outputs Open
fi = 50MHz
VIN = VCC
IC
Total Power Supply Current6
15.5
22.85
mA
VIN = GND
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at VCC = 3.3V, +25°C ambient.
3. Per TTL driven input (VIN = VCC -0.6V); all other inputs at VCC or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
5. Values for these conditions are examples of the IC formula. These limits are guaranteed but not tested.
6. IC = IQUIESCENT + IINPUTS + IDYNAMIC
IC = ICC + ∆ICC DHNT + ICCD (fi)
ICC = Quiescent Current (ICCL, ICCH and ICCZ
)
∆ICC = Power Supply Current for a TTL High Input (VIN = VCC -0.6V)
DH = Duty Cycle for TTL Inputs High
NT = Number of TTL Inputs at DH
ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fi = Input Frequency
All currents are in milliamps and all frequencies are in megahertz.
3.3V CMOS 1-TO-10 CLOCK DRIVER
3 of 19
Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
