40
160
20
800
Eoff
mJ
mJ
ns
ns
Eon
td(off)
30
20
10
0
120
15
10
5
600
Eoff
Eon
td(on)
t
t
tr
80
40
0
400
200
0
VCE = 600V
GE = ±15V
RG = 15Ω
TJ = 125°C
V
VCE = 600V
GE = ±15V
RG = 15Ω
V
TJ = 125°C
tf
121T120
121T120
0
0
50
100
150
A
0
50
100
150 A
IC
IC
Fig. 7 Typ. turn on energy and switching
times versus collector current
Fig. 8 Typ. turn off energy and switching
times versus collector current
25
mJ
20
200
ns
25
2000
ns
td(on)
Eon
VCE = 600V
GE = ±15V
IC = 75A
VCE = 600V
GE = ±15V
IC = 75A
mJ
V
V
td(off)
160
20
15
10
5
1600
1200
800
400
0
Eoff
Eon
TJ = 125°C
TJ = 125°C
t
t
15
10
5
120
80
40
0
Eoff
tr
121T120
tf
121T120
0
0
Ω
Ω
0
8
16
24
32
40
RG
48
56
0
8
16
24
32
40
48
56
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
200
1
A
160
K/W
0,1
ICM
ZthJC
0,01
diode
IGBT
120
80
40
0
RG = 15Ω
TJ = 125°C
0,001
0,0001
V
CEK < VCES
single pulse
121T120
VID...125-12P1
0,00001
0,00001 0,0001 0,001
0,01
0,1
1
V
s
0
200 400 600 800 1000 1200
VCE
t
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
