PSHI 25/12
6
120
ns
6
mJ
4
600
mJ
ns
td(off)
td(on)
Eoff
Eon
VCE = 600V
t
t
4
2
0
80
40
0
400
Eoff
V
GE = ±15V
VCE = 600V
GE = ±15V
RG = 82Ω
RG = 82
Ω
V
tr
TVJ = 125°C
2
0
200
TVJ = 125°C
Eon
tf
25T120
25T120
0
A
30
0
10
20
0
10
20
30 A
IC
IC
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
3
mJ
2
150
2,0
mJ
800
Eon
Eoff
ns
ns
td(off)
600
td(on)
Eoff
Eon
1,5
1,0
0,5
0,0
t
t
100
tr
VCE = 600V
400
V
GE = ±15V
VCE = 600V
GE = ±15V
IC = 15A
TVJ = 125°C
IC = 15A
TVJ = 125°C
V
1
0
50
0
200
0
tf
25T120
25T120
Ω
0
20
40
60
80 100 120 140
0
20
40
60
80 100 120 Ω 140
RG
RG
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
40
10
diode
IGBT
K/W
1
A
30
ZthJC
ICM
0,1
20
10
0
0,01
0,001
single pulse
RG = 82 Ω
TVJ = 125°C
25T120
VDI...25-12P1
0,0001
0,000010,0001 0,001 0,01
0,1
1
s
10
0
200 400 600 800 1000 1200 1400
VCE
V
t
Fig. 11 Reverse biased safe operating area
Fig.12 Typ.transientthermalimpedanceRBSOA
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D - 91126 Schwabach
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