PSDH 175
10
V
200
[A]
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
DC
sin.180°
rec.120°
rec.60°
rec.30°
150
125
100
75
6: PGM = 10W
6
1
5
4
50
V
G
3
25
TAV
I
2
0
1
50
100
150
200
T
(°C)
0.1
C
0
1
2
3
4
10
10
I
10
10
mA
10
G
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
0.8
K/W
Z
0.6
0.4
0.2
thJK
Z
thJC
Z
th
0.01
0.1
1
10
t[s]
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
600
80
[W]
PSDH 175
TC
85
0.090.05 = RTHCA [K/W]
0.13
500
90
95
400
300
200
100
0.2
100
105
110
115
120
0.34
DC
sin.180°
rec.120°
rec.60°
rec.30°
0.76
°C
PVTOT
0
125
0
50
100
150
50
100
150
[A]
ITAVM
Tamb
[K]
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
