PSDH 175
Symbol Test Conditions
Characteristic Value
TVJ = TVJM, VR = VRRM, VD = VDRM
5
1.57
0.85
3.5
mA
V
≤
≤
ID, IR
VT
IT = 200A, TVJ = 25°C
For power-loss calculations only (TVJ = TVJM
)
V
VTO
mΩ
rT
VD = 6V
VD = 6V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.5
1.6
V
V
≤
≤
VGT
IGT
100
200
mA
mA
≤
≤
TVJ = TVJM
TVJ = TVJM
TVJ = 25°C, tP = 30µs
VD = 2/3 VDRM
VD = 2/3 VDRM
0.2
5
450
V
mA
mA
≤
≤
VGD
IGD
IL
≤
IG = 0.3A, diG/dt = 0.3A/µs
200
2
mA
µs
TVJ = 25°C, VD = 6V, RGK = ∞
TVJ = 25°C, VD = ½ VDRM
IG = 0.3A, diG/dt = 0.3A/µs
≤
≤
IH
tgd
150
TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM
per thyristor; sine 180°el
per module
per thyristor; sine 180° el
per module
µs
tq
0.46
0.077
0.55
0.092
K/W
K/W
K/W
K/W
RthJC
RthJK
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
10
9.4
50
mm
mm
dS
dA
a
m/s2
I
T(OV)
------
I
300
TSM
I
TVJ=45°C
1500
(A)
1:T = 125°C
TSM
T
=25°C
VJ
VJ
[A]
250
TVJ=150°C
1350
us
2:T = 25°C
VJ
1.6
1.4
1.2
1
100
200
150
100
50
Limit
Typ.
t
gd
10
0
V
RRM
0.8
0.6
1/2
1
V
RRM
V
RRM
I
F
1
2
0
0.4
10
1
0.5
1
1.5
2
100
0
1
2
3
10
1000
10 t[ms] 10
10
I [mA]
V [V]
F
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trGigger delay time
Fig. 3 Surge overload current
per diode (or thyristor) IFSM
TSM: Crest value t: duration
,
I
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
POWERSEM [ POWERSEM GMBH ]
