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LNK623 参数 Datasheet PDF下载

LNK623图片预览
型号: LNK623
PDF下载: 下载PDF文件 查看货源
内容描述: 能源艾菲cient ,离线式开关,提供精确的初级侧恒压( CV )控制 [Energy-Effi cient, Off-line Switcher with Accurate Primary-side Constant-Voltage (CV) Control]
分类和应用: 开关
文件页数/大小: 18 页 / 533 K
品牌: POWERINT [ Power Integrations ]
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LNK623-626  
Drain Clamp  
Recommended Clamp Circuits  
RC2  
DC2  
RC2  
CC1  
CC1  
RC1  
DC1  
RC1  
DC1  
PI-5107-110308  
PI-5108-110308  
Figure 9. RCD Clamp, Low Power or Low Leakage Inductance Designs.  
RCD Clamp With Zener Bleed. High Power or High Leakage Inductance Designs.  
Components R±, R2, C3, VR± and D1 in figure 4 comprise the  
clamp. This circuit is preferred when the primary leakage  
inductance is greater than ±21 μH to reduce drain voltage  
overshoot or ringing present on the feedback winding. For best  
output regulation, the feedback voltage must settle to within ±5  
at 2.± μs from the turn off of the primary MOSFET. This requires  
careful selection of the clamp circuit components. The voltage of  
VR± is selected to be ~205 above the reflected output voltage  
(VOR). This is to clip any turn off spike on the drain but avoid  
conduction during the flyback voltage interval when the output  
diode is conducting. The value of R± should be the largest value  
that results in acceptable settling of the feedback pin voltage and  
peak drain voltage. Making R± too large will increase the  
discharge time of C3 and degrade regulation. Resistor R2  
dampens the leakage inductance ring. The value must be large  
enough to dampen the ring in the required time but must not be  
too large to cause the drain voltage to exceed 680 V.  
RC2  
CC1  
RC1  
DC1  
PI-5107-110308  
If the primary leakage inductance is less than ±21 μH, VR± can  
be eliminated and the value of R± increased. A value of 470 kΩ  
with an 820 pF capacitor is a recommended starting point.  
Verify that the peak drain voltage is less than 680 V under all  
line and load conditions. Verify the feedback winding settles to  
an acceptable limit for good line and load regulation.  
Effect of Fast (500 ns) versus Slow (2 μs) Recovery  
Diodes in Clamp Circuit on Pulse Grouping and Output  
Ripple.  
A slow reverse recovery diode reduces the feedback voltage  
ringing. The amplitude of ringing with a fast diode represents  
85 error in Figure ±0.  
Black Trace: Dis a FR±07 (fast type, trr = 100 ns)  
Gray Trace: Dis a ±N4007G (standard recovery, trr = 2 us)  
Figure 10. Effect of Clamp Diode on Feedback Pin Settling. Clamp Circuit (top).  
Feedback Pin Voltage (bottom).  
8
Rev. E 09/09  
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